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Other articles related with "electrical characteristic"：
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46103 |
Xiu-Rong Qu(曲秀荣), Yan-Yan Xu(徐岩岩), Shu-Chen Lü(吕树臣), Jian-Min Hu(胡建民) |
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Electrical properties of Ca3-xSmxCo4O9+δ ceramics preparedunder magnetic field |
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Chin. Phys. B
2020 Vol.29 (4): 46103-046103
[Abstract]
(414)
[HTML 1 KB]
[PDF 1240 KB]
(171)
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127201 |
Guo Wei-Ling (郭伟玲), Yan Wei-Wei (闫薇薇), Zhu Yan-Xu (朱彦旭), Liu Jian-Peng (刘建朋), Ding Yan (丁艳), Cui De-Sheng (崔德胜), Wu Guo-Qing (吴国庆) |
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Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes |
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Chin. Phys. B
2012 Vol.21 (12): 127201-127201
[Abstract]
(1031)
[HTML 1 KB]
[PDF 462 KB]
(3165)
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37304 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes |
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Chin. Phys. B
2012 Vol.21 (3): 37304-037304
[Abstract]
(1315)
[HTML 1 KB]
[PDF 301 KB]
(1906)
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117301 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 117301-117301
[Abstract]
(1858)
[HTML 0 KB]
[PDF 413 KB]
(2914)
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97107 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), and Huang Jian-Hua(黄建华) |
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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination |
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Chin. Phys. B
2010 Vol.19 (9): 97107-097107
[Abstract]
(1613)
[HTML 1 KB]
[PDF 2572 KB]
(2292)
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127303 |
Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃) |
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Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET |
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Chin. Phys. B
2010 Vol.19 (12): 127303-127303
[Abstract]
(1547)
[HTML 1 KB]
[PDF 973 KB]
(845)
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